In-situ characterisation of a 3 nm technology transistor, with probes landed on the device and a measured I–V family.
Flagship · Semiconductor

Nanoprobing

Land up to eight ultra-fine needles on individual transistors — inside your SEM or FIB/SEM — to measure their electrical behaviour at the 3 nm node and beyond.

  • Nanoprobing
  • EBAC
  • EBIC
  • EBIRCH
  • RCI
  • Current imaging
8probes on a single shuttle
3 nmtechnology node and beyond
<0.05 nmpositioning resolution
<50 fA/Vinsulation leakage
Trusted in the world’s leading fabs and research labs
A flagship validated in the peer-reviewed literature
  • Nature Communications
  • ACS Nano
  • Communications Engineering
  • Ultramicroscopy
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Put eight probes on your toughest device

Tell us your node, your failure mode and your microscope — we’ll show you the nanoprobing workflow and route you to the right regional team.